Abstract We report on the selective area growth of InAs nanowires on patterned SiO 2 /Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He + -ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He + -ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

中文翻译：

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通过聚焦氦离子束技术直接写入 SiO 2 /Si(111) 模板的 InAs 纳米线的选择性区域生长

摘要 我们报告了 InAs 纳米线在通过聚焦氦离子束技术制备的图案化 SiO 2 /Si (1 1 1) 纳米孔上的选择性区域生长。我们使用单点模式，其中聚焦的氦离子束固定在单个点上，He + 离子剂量范围从 1.5 pC 到 8 pC，以钻出纳米孔。实现的最小孔径为~8 nm。我们发现低 He + 离子剂量能够促进 (1 1 1)B InAs 在高度失配的 Si 上的成核，从而导致 InAs 纳米线 (NW) 的垂直生长。相反，高 He 离子剂量会严重损坏 Si 表面，导致 NW 倾斜和条纹状。除了从 (1 1 1)A InAs 域生长的标题 NW 之外，还观察到由于缺陷引起的孪晶导致的新标题生长方向。垂直 NW 的横截面 TEM 图像显示混合纤锌矿 (WZ) 和闪锌矿 (ZB) 相，而 WZ 相占主导地位。由相变引起的堆垛层错与 NW 直径成正比，表明相转变的临界直径大于 110 nm，即我们 NW 的最大直径。当异质界面直径小于 50 nm 时，垂直 NW 的 InAs/Si 界面的错配位错周期也大于理论值，表明小接触面积能够适应 InAs 之间的大晶格和热失配和锡。我们的 NW 的最大直径。当异质界面直径小于 50 nm 时，垂直 NW 的 InAs/Si 界面的错配位错周期也大于理论值，表明小接触面积能够适应 InAs 之间的大晶格和热失配和锡。我们的 NW 的最大直径。当异质界面直径小于 50 nm 时，垂直 NW 的 InAs/Si 界面的错配位错周期也大于理论值，表明小接触面积能够适应 InAs 之间的大晶格和热失配和锡。