Organic single crystals manifest the intrinsic physical properties of materials. However, traditional growth of organic single crystals is limited by low solubility from solutions or complexity from physical vapor deposition. Here we report a new method to grow organic single crystals by microspacing in-air sublimation, which avoids costly vacuum system and time-consuming procedures and is practical for a wide range of organic crystals. In situ crystal growth observation revealed an unprecedented vapor-to-melt-to-crystal mechanism, resulting from the micrometer scale spacing distance between the source and the growth position. FET devices based on the rubrene crystals directly grown on Si/SiO₂ substrate exhibited higher mobility than the best record using SiO₂ as the gate dielectric. This effective organic crystal growth technique can be affordable and handled for almost every lab, which may be beneficial for future research and application of organic crystals.

中文翻译：

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空气中微间距空气的升华生长

有机单晶表现出材料的固有物理特性。然而，有机单晶的传统生长受到溶液的低溶解度或物理气相沉积的复杂性的限制。在这里，我们报告了一种通过微间距空气升华来生长有机单晶的新方法，该方法避免了昂贵的真空系统和费时的过程，并且适用于多种有机晶体。原位晶体生长观察表明，源与生长位置之间的微米尺度间隔距离导致了空前的熔体融化晶体机理。直接生长在Si / SiO ₂衬底上的基于红荧烯晶体的FET器件比使用SiO ₂的最佳记录显示出更高的迁移率作为栅极电介质。这种有效的有机晶体生长技术几乎可以在每个实验室中负担得起，并且可以使用，这可能对将来有机晶体的研究和应用是有益的。