A Schottky junction based self-powered photodetector fabricated by facile processes that has a response from the UV to infrared region is still a challenge. In this work, a CdS nanorod array/reduced graphene oxide (rGO) film heterojunction was fabricated via spin-coating, affording an ultra broadband self-powered photoresponse from the ultra violet to infrared region (365–1450 nm), which is the first reported in this region for rGO complex materials. Compared with a single-component CdS nanorod array or rGO film alone, a CdS nanorod array/rGO film heterojunction exhibits a very fast and stable self-powered photoresponse (with a response time of less than 1.7 ms), which results from the formation of an interfacial Schottky junction between CdS and rGO. The photocurrent and responsibility under UV radiation can be increased by more than 11% when a 4% compressive strain is deployed, which is ascribed to the Schottky barrier height modification between the CdS and rGO induced by a strain-induced piezopotential. This work provides a simple and effective method for obtaining high-performance self-powered piezo-phototronic broadband heterojunctions.

中文翻译：

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基于CdS纳米棒阵列/还原氧化石墨烯薄膜异质结的新型高性能自供电UV-vis-NIR光电探测器及其压电光电调节†

具有通过紫外线到红外线区域的响应的，通过简便的工艺制造的基于肖特基结的自供电光电探测器仍然是一个挑战。在这项工作中，通过以下方法制备了CdS纳米棒阵列/还原氧化石墨烯（rGO）薄膜异质结：旋涂，可提供从紫外到红外区域（365-1450 nm）的超宽带自供电光响应，这是该地区首次报道的rGO复合材料。与仅单组分CdS纳米棒阵列或rGO膜相比，CdS纳米棒阵列/ rGO膜异质结显示出非常快速和稳定的自供电光响应（响应时间小于1.7 ms），这是由于形成了CdS和rGO之间的界面肖特基结。当施加4％的压缩应变时，UV辐射下的光电流和响应可以增加11％以上，这归因于应变诱导的压电势引起的CdS和rGO之间的肖特基势垒高度变化。