In this paper, a new fabrication method for silicon nanowires/micropillars structure is proposed. This method is using lithography and metal-assisted chemical etching to fabricate the structure of silicon nanowires/micropillars. In the experiment, to obtain the optimal light trapping properties of silicon nanowires/micropillars structure, the optimal light trapping properties of silicon nanowires were systemically investigated, including etching concentration, etching time and etching temperature. And then, a large-area uniform, controllable and optimal light trapping silicon nanowires/micropillars structure was fabricated using lithography and metal-assisted chemical etching method. This controllable and facile method for silicon nanowires/micropillars structure will expand its application in the field of optoelectronic devices and solar cells.

本文提出了一种新的制造硅纳米线/微柱结构的方法。该方法使用光刻和金属辅助化学蚀刻来制造硅纳米线/微柱的结构。在实验中，为了获得硅纳米线/微柱结构的最佳光捕获性能，系统地研究了硅纳米线的最佳光捕获性能，包括刻蚀浓度，刻蚀时间和刻蚀温度。然后，采用光刻技术和金属辅助化学刻蚀方法，制备了大面积均匀，可控，最佳的光捕获硅纳米线/微柱结构。这种可控且简便的硅纳米线/微柱结构方法将扩大其在光电器件和太阳能电池领域的应用。