Present study makes a punctilious investigation of the profiles of Stark shift (SS) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A few physical parameters have been varied and the consequent variations in the SS profiles have been monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for Al_xGa_1-xAs${\mathit{Al}}_x{\mathit{Ga}}_{1-x}\mathit{As}$ alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SS profiles unfurl interesting features that heavily depend upon the particular physical quantity concerned, presence/absence of noise and the manner (additive/multiplicative) noise enters the system. The study highlights feasible means of maximizing SS of doped QD in presence of noise by suitable adjustment of several control parameters. The study deems importance in view of technological applications of QD devices where noise plays some prominent role.

本研究对高斯白噪声的监督下掺杂GaAs量子点（QD）的Stark位移（SS）的轮廓进行了点点研究。更改了一些物理参数，并监视了SS配置文件中随之发生的变化。所述物理参数包括磁场，限制电位，掺杂剂位置，掺杂剂电位，噪声强度，铝浓度（仅对于Al _x Ga _1-x As${\mathit{铝}}_X{\mathit{嘎}}_{\mathrm{1个}--X}\mathit{作为}$合金QD），位置相关有效质量（PDEM），位置相关介电屏蔽功能（PDDSF），各向异性，静水压力（HP）和温度。SS配置文件显示出有趣的功能，这些功能在很大程度上取决于所涉及的特定物理量，噪声的存在与否以及噪声进入系统的方式（相加/相乘）。该研究着重指出了通过适当调整几个控制参数来最大化存在噪声时掺杂QD的SS的可行方法。鉴于在噪声起主要作用的QD设备的技术应用中，该研究认为很重要。