In this paper, two new asymmetric donor-bridge-acceptor molecules (PFTCH and PFTCE) containing the same electron donor (pyrene group) and bridge (fluorene group) but different terminal electron acceptors (cyanoacetic acid for PFTCH and ethyl cyanoacetate for PFTCE) have been synthesized and characterized by NMR, HR-MS etc. Their photophysical properties including Uv-vis absorption and emission spectra were studied. They were further used as the memory active materials and the ITO/PFTCH or PFTCE/Al sandwich memory devices were prepared, in which the organic films were obtained by solution process. The I-V measurements display satisfactory memory performance; they have a low threshold voltage, high ON/OFF ratio (10⁶) and a low current value (10⁻⁴ A) at the ON state. Although the electron-withdrawing ability of the cyanoacetic acid group is stronger than that of the ethyl cyanoacetate group, the two memory devices (ITO/PFTCH/Al or Au and ITO/PFTCE/Al or Au) display different memory behaviors (volatile DRAM for ITO/PFTCH/Al or Au devices and nonvolatile WORM for ITO/PFTCE/Al or Au devices). The mechanism is speculated and the different memory behaviors can be tentatively attributed to the different migration processes of the charge carriers under the influence of an electric field. This can offer a new idea for the molecular design of materials with volatile memory.

在本文中，两个新的非对称的供体-桥-受体分子（PFTCH和PFTCE含有相同给电子体（芘基）和桥（芴基），但不同的终端电子受体（氰乙酸为）PFTCH和氰基乙酸乙酯为PFTCE）具有通过NMR，HR-MS等方法对其进行了合成和表征。研究了它们的光物理性质，包括紫外可见吸收和发射光谱。将它们进一步用作存储活性材料，并制备了ITO / PFTCH或PFTCE / Al夹心存储器件，其中通过溶液法获得了有机膜。该IV测量显示令人满意的存储性能；它们具有低阈值电压，高ON / OFF比（10 ⁶）和处于ON状态的低电流值（10 ^-4 A）。尽管氰基乙酸基团的吸电子能力强于氰基乙酸乙酯基团的吸电子能力，但这两个存储设备（ITO / PFTCH / Al或Au和ITO / PFTCE / Al或Au）显示出不同的存储行为（对于ITO / PFTCH / Al或Au器件以及用于ITO / PFTCE的非易失性WORM/ Al或Au设备）。推测该机制，并且不同的存储行为可以暂时归因于在电场的影响下电荷载流子的不同迁移过程。这可以为具有易失性存储器的材料的分子设计提供新的思路。