• Contact-electrification is a conventional triboelectrification technique for generating current through charge transfer when two different polarized materials are brought into contact. For the first time, in-built alternate hydrophilic and hydrophobic nano channels were developed where both ionic and electronic charge transfer mechanisms were realized through contact separation mode between BNO-SPI films and PTFE. In this paper, we examined the dynamic interaction between these materials and observed adequate output performance. The novel BNO-SPI-TENGs (i.e. SO3H.BNO-SPI-TENG, SO3Li.BNO-SPI-TENG, and SO3H.TEA.BNO-SPI-TENG) produced 75 V and 1 µA, 43 V and 0.6 µA, and 9 V and 0.13 µA of open-circuit voltages (Voc) and short-circuit currents (Jsc) at 6 Hz, respectively. Particularly, the SO3H-BNO-SPI was dramatically boosted up the performance of TENG, up to 733% of Voc and 669% of Jsc, with respect to the SO3H.TEA-BNO-SPI because the mobility of H+ ions is very high on the device surface compared to the other two Li+ and TEA bulky ions. The developed dual characteristic BNO-SPI-TENGs are very good candidates for fulfilling the need for alternate contact separation mode TENGs.

•接触起电是一种常规的摩擦起电技术，当两种不同的极化材料接触时，该电荷通过电荷转移产生电流。首次开发了内置的亲水性和疏水性交替纳米通道，其中通过BNO-SPI膜与PTFE之间的接触分离模式实现了离子和电子电荷转移机制。在本文中，我们检查了这些材料之间的动态相互作用，并观察到了足够的输出性能。新型BNO-SPI-TENG（即SO3H.BNO-SPI-TENG，SO3Li.BNO-SPI-TENG和SO3H.TEA.BNO-SPI-TENG）产生75 V和1 µA，43 V和0.6 µA，并且6 Hz时的开路电压（Voc）和短路电流（Jsc）分别为9 V和0.13 µA。特别，与SO3H相比，SO3H-BNO-SPI大大提高了TENG的性能，分别达到733％的Voc和669％的Jsc.TEA-BNO-SPI，因为设备上H +离子的迁移率非常高与其他两个Li +和TEA体积较大的离子相比。开发的双重特性BNO-SPI-TENGs是满足交替接触分离模式TENGs需求的很好的候选者。