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Effects of In-situ UV Irradiation on the Uniformity and Optical Properties of GaAsBi Epi-layers Grown by MBE
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.jcrysgro.2017.12.026
Daniel A. Beaton , M. Steger , T. Christian , A. Mascarenhas

Abstract In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs 1 - x Bi x epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

中文翻译:

原位紫外线照射对 MBE 生长的 GaAsBi 外延层的均匀性和光学性能的影响

摘要 原位紫外线照射影响砷化镓中铋吸附原子的结合动力学。在这里,我们使用整个样品的通量的固有变化来探索入射辐射的作用。发现通过光照可以更快地实现稳态生长过程,从而产生更陡峭的界面,以及均匀的 GaAs 1 - x Bi x 外延层。低温光致发光光谱的比较表明,随着入射通量的降低,掺入的铋原子簇的密度增加。
更新日期:2018-02-01
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