Abstract This paper presents a recent study on the morphology variation on the lateral faces of a HPHT diamond seed by MPCVD method. Raman spectroscopy and SEM were used to display the morphological and structural evolution of the grown diamond. It has been observed that different types of carbon allotropes were deposited at different heights of the substrate. At the bottom of the substrate, the feature of the lateral face was dominated by vertically aligned graphite nanoplatelets. An increment of sp 3 and sp 2 hybridized carbons was found to take over at the region of approximately 100 μm above from the bottom followed by the increasing-size diamond grains. The high quality single crystalline diamond was formed at the top of the lateral face. We proposed that the temperature gradient around the substrate is responsible for variable features on the substrate lateral face. By optimizing the growth temperature, we have obtained an enlarged area of the lateral face with high quality single crystalline diamond. This work will provide both sp 2 on sp 3 carbon materials for the development of electrochemical sensors and electrodes, and a foundation for the diamond lateral face growth with high quality and high purity.

中文翻译：

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MPCVD 同质外延沉积金刚石晶种侧面的形态和结构演变

摘要 本文介绍了通过 MPCVD 方法对 HPHT 金刚石种子侧面形貌变化的最新研究。拉曼光谱和扫描电镜用于显示生长钻石的形态和结构演变。已经观察到不同类型的碳同素异形体沉积在衬底的不同高度。在基板的底部，侧面的特征主要是垂直排列的纳米石墨片。发现 sp 3 和 sp 2 杂化碳的增加在距底部约 100 μm 以上的区域接管，然后是尺寸增加的金刚石晶粒。在侧面的顶部形成了高质量的单晶金刚石。我们提出，衬底周围的温度梯度是导致衬底侧面上的可变特征的原因。通过优化生长温度，我们获得了更大面积的高质量单晶金刚石。这项工作将为电化学传感器和电极的开发提供 sp 2 on sp 3 碳材料，并为高质量和高纯度的金刚石侧面生长奠定基础。