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Ambipolar charge transport of diketopyrrolepyrrole-silole-based copolymers and effect of side chain engineering: Compact model parameter extraction strategy for high-voltage logic applications
Organic Electronics ( IF 3.2 ) Pub Date : 2017-12-14 , DOI: 10.1016/j.orgel.2017.12.015
Kyunghun Kim , Jongwook Jeon , Yeon Hee Ha , Hyojung Cha , Chan Eon Park , Myounggon Kang , Heesauk Jhon , Soon-Ki Kwon , Yun-Hi Kim , Tae Kyu An

The copolymers P24DPP-silole and P29DPP-silole, each composed of diketopyrrolopyrrole (DPP) and silole derivatives, were synthesized using a Stille coupling reaction, and their electrical performances in organic field-effect transistors (OFETs) and circuits were investigated. While both the as-spun OFETs exhibited quite low field-effect hole mobility values, the OFETs subjected to thermal annealing at 150 °C exhibited typical ambipolar transport characteristics with average hole and electron mobility values of 1 × 10−1 cm2/(V s) and 2 × 10−3 cm2/(V s). Because the compact model was necessary to perform circuit design with the synthesized OFETs, a strategy for extracting compact model parameters was proposed for high-voltage logic circuit applications by using the industry standard compact Berkeley short-channel IGFET model (BSIM).



中文翻译:

二酮基吡咯并吡咯-硅烷基共聚物的双极性电荷传输和侧链工程的影响:高压逻辑应用的紧凑模型参数提取策略

利用Stille偶联反应合成了由二酮吡咯并吡咯(DPP)和硅烷衍生物组成的共聚物P24DPP-silole和P29DPP-silole,并研究了它们在有机场效应晶体管(OFET)和电路中的电性能。尽管两种初生的OFET均显示出非常低的场效应空穴迁移率值,但在150°C下进行热退火的OFET表现出典型的双极传输特性,平均空穴迁移率和电子迁移率值为1×10 -1 cm 2 /(V s)和2×10 -3 cm 2/(V s)。由于紧凑型模型对于使用合成的OFET进行电路设计是必要的,因此提出了一种使用行业标准紧凑型伯克利短通道IGFET模型(BSIM)提取高压逻辑电路应用紧凑型模型参数的策略。

更新日期:2017-12-14
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