Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits’ ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS₂ and MoSe₂, as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

常规场效应晶体管（FET）不能满足未来大型集成纳米电子电路的要求，因为这些电路具有超高的功耗，并且常规FET无法克服60 mV /十倍的亚阈值摆幅（SS）极限。在这项工作中，仅用铁电（Fe）聚合物聚偏二氟乙烯-三氟乙烯（P（VDF-TrFE））代替FET的普通氧化物。此外，我们采用了二维（2D）半导体，例如MoS ₂和MoSe ₂，作为渠道。这种2D Fe-FET在室温下在四个数量级的漏极电流上实现了24.2 mV / dec的超低SS；低于60 mV / dec的切换来自铁电畴切换极化过程中的Fe负电容（NC）效应。通过将2D半导体和有机铁电体集成在一起而实现的2D NC-FET，提供了一种满足下一代低能耗集成纳米电子电路要求以及未来柔性电子学要求的新方法。