Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene–CMOS integration generally.

互补金属氧化物半导体（CMOS）和单层石墨烯的集成是朝着实现低成本，低功耗，基于二维材料的异质纳米电子器件迈出的重要一步，这些器件包括能够实现未来移动传感器网络的气体传感器等气体传感器。物联网（IoT）。但是，CMOS和后CMOS工艺参数（例如温度和材料限制）以及通常不受束缚的传感器的低功耗要求，对异构集成构成了相当大的障碍。我们演示了第一个单片集成的CMOS单层石墨烯气体传感器，具有最少的后CMOS处理步骤，以实现一种结合了单层石墨烯的优异气体敏感性与硅的低功耗和成本优势的气体传感器平台CMOS平台。成熟的0。18 µm CMOS技术为射频（RF）电路平台中直接集成的石墨烯化学电阻结提供了驱动电路。这项工作特别是在可扩展且可行的RF气体传感器方面取得了重要的进展，并朝着整体式异质石墨烯-CMOS集成发展。