In this study, the effects of light‐soaking (LS), heat‐soaking (HS), and combined LS and HS, that is, heat‐light soaking (HLS) on potassium fluoride (KF)‐treated and KF‐free copper indium gallium selenide (CIGS) solar cells with CBD‐CdS buffer layer were investigated. LS and HS did not change the basic solar cell parameters of CIGS solar cells when they were performed separately. In contrast, HLS improved cell efficiency with increased open‐circuit‐voltage for KF‐treated CIGS solar cells, whereas it reduced cell performance for KF‐free CIGS cells. Capacitance‐voltage measurements confirmed a significantly increased carrier concentration in KF‐treated CIGS solar cells, as compared to KF‐free cells by HLS. X‐ray photoelectron spectroscopy measurement revealed that the HLS did not change the atomic concentration of Cd, S, and O in CBD‐CdS buffer layer. However, the concentration of Na atoms slightly increased at the CIGS surface region, as confirmed from SIMS measurement. It implies a possible reason for increased carrier concentration in KF‐treated CIGS solar cells after HLS. Temperature‐dependent current‐voltage measurements suggests that HLS modify a K‐containing new layer and affects cell performance.

中文翻译：

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热光浸泡对带有CdS缓冲层的氟化钾处理的CIGS太阳能电池的影响

在这项研究中，光浸（LS），热浸（HS）以及LS和HS的组合，即热浸（HLS）对氟化钾（KF）处理和无KF的铜的影响研究了具有CBD-CdS缓冲层的硒化铟镓（CIGS）太阳能电池。分别执行时，LS和HS不会更改CIGS太阳能电池的基本太阳能电池参数。相比之下，HLS改善了经过KF处理的CIGS太阳能电池的开路电压，从而提高了电池效率，而降低了无KF的CIGS电池的电池性能。电容电压测量结果证实，与采用HLS的无KF电池相比，经KF处理的CIGS太阳能电池的载流子浓度显着增加。X射线光电子能谱测量表明，HLS不会改变Cd，S，和CBD-CdS缓冲层中的O。然而，如通过SIMS测量所证实的，在CIGS表面区域处Na原子的浓度略有增加。这暗示了HLS后KF处理的CIGS太阳能电池中载流子浓度增加的可能原因。与温度有关的电流电压测量表明，HLS会修改含K的新层并影响电池性能。