In this work, we develop a fabrication process for an interdigitated back contact solar cell using BBr₃ diffusion to form the p⁺ region and POCl₃ diffusion to form the n⁺ regions. We use the industry standard technology computer‐aided design modelling package, Synopsys Sentaurus, to optimize the geometry of the device using doping profiles derived from electrochemical capacitance voltage measurements. Cells are fabricated using n‐type float‐zone silicon substrates with an emitter fraction of 60%, with localized back surface field and contact holes. Key factors affecting cell performance are identified including the impact of e‐beam evaporation, dry etch damage, and bulk defects in the float zone silicon substrate. It is shown that a preoxidation treatment of the wafer can lead to a 2 ms improvement in bulk minority carrier lifetime at the cell level, resulting in a 4% absolute efficiency boost.

中文翻译：

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在叉指式背接触式硅太阳能电池的加工过程中最大程度地降低体积寿命退化

在这项工作中，我们开发了一种使用BBr ₃扩散形成p ⁺区和POCl ₃扩散形成n ⁺区的叉指背接触太阳能电池的制造工艺。我们使用行业标准技术的计算机辅助设计建模软件包Synopsys Sentaurus，利用从电化学电容电压测量得出的掺杂分布来优化设备的几何形状。电池是使用n制造的浮球型硅衬底，其发射极分数为60％，具有局部背面电场和接触孔。确定了影响电池性能的关键因素，包括电子束蒸发，干法蚀刻损伤和浮区硅衬底中的体积缺陷的影响。结果表明，晶片的预氧化处理可以在单元水平上使整体少数载流子寿命延长2 ms，从而使绝对效率提高4％。