Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied V_oc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large‐area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made.

中文翻译：

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无间隙点背表面场，用于通过毯状荫罩植入工艺反掺杂大面积交叉指型背接触太阳能电池

使用离子注入工艺在硼发射极上以磷背面表面制造了无间隙叉指背接触（IBC）太阳能电池。硼发射极（硼离子注入）被磷背面电场（BSF）（磷离子注入）无间隙地反掺杂。将发射极和BSF之间的无间隙工艺步骤与现有的IBC太阳能电池进行了比较，并使用扩散工艺获得了发射极和BSF之间的间隙。我们优化了磷BSF和硼发射极区域中的掺杂工艺，以及隐含的V _oc。分析了反掺杂区磷和硼注入剂量的接触电阻关系。我们证实了无间隙IBC太阳能电池的分流电阻以及在无间隙IBC太阳能电池中分流行为的可能性。高掺杂的反向掺杂的BSF在7.5 V左右的高反向偏置电压下导致受控的结击穿。使用反向掺杂的BSF和发射极优化掺杂区域后，大面积（5英寸伪正方形）无间隙IBC太阳能电池功率转换效率为22.9％。