Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod array. The photodetector performance was improved by increasing the conductivity of PEDOT:PSS polymer using dimethyl sulfoxide (DMSO) additive. The UV detector performance was further enhanced significantly by sensitizing ZnO nanorods with N doped graphene quantum dots (NGQDs). NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ∼ 90063%), responsivity ($R_{\lambda }$∼247 A/W) and detectivity ($D_{\lambda }$∼2.42 × 10¹¹ Hz^1/2/W) at 340 nm wavelength and –1V external bias. The EQE of NGQD modified sample was 56 times higher than pristine PEDOT:PSS/ZnO NR and 4.3 times higher than DMSO modified PEDOT:PSS/ZnO NRs device. NGQD sensitized detector showed superior photocurrent of 80.77 mA/cm² at 340 nm wavelength, –1V external bias, which was 2 times higher than DMSO modified and 32 times higher than pristine PEDOT:PSS based device. The photocurrent rise and decay time of NGQD sensitized NRs are very fast compared to other photodetectors.

肖特基结紫外（UV）光电探测器是通过在水热生长的氧化锌（ZnO）纳米棒阵列上旋涂导电聚合物，聚3,4-乙撑二氧噻吩：聚苯乙烯磺酸盐（PEDOT：PSS）制成的。通过使用二甲基亚砜（DMSO）添加剂提高PEDOT：PSS聚合物的电导率，可以提高光电探测器的性能。通过使用N掺杂的石墨烯量子点（NGQD）敏化ZnO纳米棒，可进一步显着提高UV检测器的性能。NGQD装饰的ZnO NRs / DMSO-PEDOT：PSS肖特基结器件显示出优异的外部量子效率（EQE〜90063％），响应度（${\mathrm{[R}}_{\lambda }$约247 A / W）和探测率（$d_{\lambda }$在340 nm波长和–1V外部偏置下约为2.42×10 ¹¹  Hz ^1/2 / W）。NGQD改性样品的EQE较原始PEDOT：PSS / ZnO NRs高56倍，比DMSO改性PEDOT：PSS / ZnO NRs装置高4.3倍。NGQD敏化检测器在340 nm波长下显示出80.77 mA / cm ^2的优异光电流，–1V外部偏置，这比DMSO改性的器件高2倍，比基于PEDOT：PSS的原始器件高32倍。与其他光电探测器相比，NGQD敏化NR的光电流上升和衰减时间非常快。