Abstract Graphene and related two-dimensional (2D) materials are attracting huge attention due to their wide-range potential applications. Because large-scale, high-quality 2D crystals are prerequisites for many of the applications, crystal growth of 2D materials has been intensively studied. We have also been conducting research to understand the growth mechanism of 2D materials and have been developing growth techniques of high-quality materials based on the understandings, in which detailed structural characterizations using low-energy electron microscopy (LEEM) have played essential roles. In this paper, we explain the principles of obtaining various structural features using LEEM, and then we review the status of our current understanding on the growth of graphene and hexagonal boron nitride.

中文翻译：

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石墨烯和六方氮化硼的生长和低能电子显微镜表征

摘要 石墨烯和相关的二维 (2D) 材料由于其广泛的潜在应用而引起了极大的关注。由于大规模、高质量的 2D 晶体是许多应用的先决条件，因此对 2D 材料的晶体生长进行了深入研究。我们还一直在进行研究以了解 2D 材料的生长机制，并在此基础上开发高质量材料的生长技术，其中使用低能电子显微镜 (LEEM) 的详细结构表征发挥了重要作用。在本文中，我们解释了使用 LEEM 获得各种结构特征的原理，然后我们回顾了我们目前对石墨烯和六方氮化硼生长的理解现状。