Abstract This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

中文翻译：

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半导体硅晶体的生长

摘要 本文重点介绍了用于大规模集成电路 (LSI) 的直拉 (CZ) 晶体生长和太阳能电池使用定向凝固方法的多晶硅生长的最新进展。通过 CZ 法生长硅晶体，目前可以生长出满足 LSI 或电动汽车功率器件的器件要求的高质量晶体。本文介绍了如何获得杂质含量低、点缺陷少的高质量晶体。它还涵盖了定向凝固方法，该方法为光伏应用产生具有中等转换效率的晶体。我们讨论了降低效率的缺陷和杂质以及克服这些问题的步骤。