Abstract The semiconductors formed from group 13 metals and from group 15 anions, referred to as the III-V semiconductors, have found use in a broad range of technologies. Their versatility arises from the wide range of optical and electronic properties accessed through the formation of multi-component alloys. These alloys can be synthesized using the epitaxial growth techniques for devices consisting of several-to-hundreds of highly controlled individual layers monolithically formed into a nearly defect-free structure. This ability to design and fabricate such detailed structures, whose dimensions can be at the nanometer scale, has been driven by an understanding of the crystal growth and materials technology. The paper introduces key features of these materials, their materials science and crystal growth.

中文翻译：

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III-V 族化合物半导体：生长和结构

摘要 由 13 族金属和 15 族阴离子形成的半导体，称为 III-V 族半导体，已用于广泛的技术领域。它们的多功能性源于通过形成多组分合金获得的广泛的光学和电子特性。这些合金可以使用外延生长技术合成，用于器件由几到几百个高度受控的单个层组成，整体形成几乎无缺陷的结构。这种设计和制造这种尺寸可以达到纳米级的详细结构的能力是由对晶体生长和材料技术的理解驱动的。本文介绍了这些材料的主要特征、材料科学和晶体生长。