Abstract Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 −1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimentally demonstrated in this paper that a reverse process may occur in Ge/GeSi strained buffer/Si(0 0 1) heterostructures under certain conditions, namely, decoupling of two 60° dislocations that formed the Lomer-type dislocation, i.e., unzipping. It is assumed that the driving force responsible for separation of Lomer dislocations into two 60° dislocations is the strain remaining in the GeSi buffer layer.

中文翻译：

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Ge/GeSi/Si(001)异质结构中Lomer型刃位错的解链和移动

摘要 面心晶体中的边位错是由两个混合位错沿相交的{1 -1 1} 面滑动形成的，形成所谓的洛默锁。这个过程被称为压缩，在能量上是有益的。本文通过实验证明，在一定条件下，Ge/GeSi 应变缓冲层/Si(0 0 1)异质结构中可能会发生相反的过程，即形成Lomer型位错的两个60°位错的解耦，即解链. 假设负责将 Lomer 位错分离成两个 60° 位错的驱动力是保留在 GeSi 缓冲层中的应变。