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Reconfigurable Si Nanowire Nonvolatile Transistors
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2017-12-11 , DOI: 10.1002/aelm.201700399
So Jeong Park 1, 2, 3 , Dae-Young Jeon 1, 2, 4 , Sabrina Piontek 5 , Matthias Grube 5 , Johannes Ocker 5 , Violetta Sessi 1, 2 , André Heinzig 1, 2 , Jens Trommer 5 , Gyu-Tae Kim 3 , Thomas Mikolajick 1, 2 , Walter M. Weber 2, 5
Affiliation  

Reconfigurable transistors merge unipolar p‐ and n‐type characteristics of field‐effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine‐grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge‐trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

中文翻译:

可重配置的Si纳米线非易失性晶体管

可重新配置的晶体管将场效应晶体管的单极p型和n型特性合并到单个可编程设备中。组合电路通过在运行时对整个逻辑模块进行细粒度的重新配置,在面积和功耗上都显示出了优势。为了补充这种易失性编程技术,提出了可单独寻址的可重配置非易失性晶体管的概念验证。集成了电荷陷阱堆栈,并演示了单个设备中的四个不同且稳定的状态。
更新日期:2017-12-11
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