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Rapid Thermal Processed CuInSe2 Layers Prepared by Electrochemical Route for Photovoltaic Applications
Journal of The Electrochemical Society ( IF 3.9 ) Pub Date : 2017-12-08 00:00:00 , DOI: 10.1149/2.0081804jes
Ashwini B. Rohom , Priyanka U. Londhe , Nandu B. Chaure

Impact of rapid thermal (RT) annealing and normal selenization process on the properties of CuInSe2 (CIS) layers prepared by electrochemical route is reported. Cyclic voltammetric measurement was carried out to optimize the co-deposition potentials. A range of characterization techniques were employed to study the properties. Three prominent reflections(112),(204/220) and (312/116) of tetragonal CIS were exhibited in as-deposited CIS layers. Upon selenization, the crystallinity was found to be improved. Uniform, compact, densely packed surface morphology was observed in as-prepared sample. Large grains are developed upon RT annealing due to recrystallization. Elemental composition obtained by EDAX confirms the growth of stoichiometric layers. Photo-electrochemical study demonstrates the p-type conductivity. Current-voltage, capacitance-voltage, electrochemical impedance spectroscopy were conducted to investigate the influence of the grain size and crystallinity on electrical properties. Energy band-gap estimated from absorption spectra were 1.18, 1.04 and 0.98 eV for as-deposited, selenized, RT annealed samples, respectively. X-ray Photoelectron spectroscopy confirms the presence of Cu+, In3+ and Se2− oxidation states in all CIS layers. Power conversion efficiency of 3.05% and 5.94% were achieved for selenized and RT annealed samples, respectively. The improved efficiency measured for RT annealed sample is proposed due to the growth of highly crystalline, large grain and compact surface morphology.

中文翻译:

通过电化学途径制备的用于光伏应用的快速热处理CuInSe2层

快速热退火和正常硒化工艺对CuInSe 2性能的影响报道了通过电化学途径制备的(CIS)层。进行循环伏安法测量以优化共沉积电位。采用了一系列表征技术来研究其性能。在沉积的CIS层中显示了四边形CIS的三个显着反射(112),(204/220)和(312/116)。硒化时,发现结晶度得到改善。在制备的样品中观察到均匀,致密,密集堆积的表面形态。由于再结晶,在RT退火时产生大晶粒。通过EDAX获得的元素组成证实了化学计量层的生长。光电化学研究证明了p型电导率。电流电压,电容电压,进行了电化学阻抗谱研究,以研究晶粒尺寸和结晶度对电性能的影响。从吸收光谱估计的能量带隙分别为沉积的,硒化的,RT退火的样品的1.18、1.04和0.98 eV。X射线光电子能谱证实了铜的存在在所有CIS层中的+,In 3+和Se 2−氧化态。硒化和RT退火样品的功率转换效率分别为3.05%和5.94%。由于高结晶度,大晶粒和致密的表面形态的生长,提出了提高RT退火样品的测量效率的方法。
更新日期:2017-12-10
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