Si_0.973Ge_0.027 epilayers were grown on a Si (001) substrate by a lateral liquid-phase epitaxy (LLPE) technique. The lateral growth mechanism favoured the glide of misfit dislocations and inhibited the nucleation of new dislocations by maintaining the thickness less than the critical thicknesses for dislocation nucleation and greater than the critical thickness for glide. This promoted the formation of an array of long misfit dislocations parallel to the [110] growth direction and reduced the threading dislocation density to 10³ cm^-2, two orders of magnitude lower than the seed area with an isotropic misfit dislocation network.

中文翻译：

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横向生长液相外延降低Si（001）上SiGe外延层中的螺纹位错密度

通过横向液相外延（LLPE）技术在Si（001）衬底上生长Si _0.973 Ge _0.027外延层。横向生长机制通过保持厚度小于位错成核的临界厚度且大于滑动成核的临界厚度，有利于错位错位的滑动，并抑制了新位错的形核。这促进了平行于[110]生长方向的长错配位错阵列的形成，并将穿线错位密度降低到10 ³ cm ^-2，比各向同性错配位错网络的种子面积低两个数量级。