Sb₂Se₃ is a promising photovoltaic material due to its suitable bandgap, strong light absorption, simple phase, nontoxicity, and earth‐abundant constituents. Currently, most Sb₂Se₃ thin‐film solar cells are based on toxic CdS as the buffer layer. Here, for the first time, non‐toxic, wide‐bandgap, and chemically stable SnO₂ is introduced as the buffer layer instead of CdS to build superstrate SnO₂/Sb₂Se₃ thin‐film solar cells. The phase of sprayed SnO₂ films and device band alignment are investigated in detail. SnO₂ buffer layer annealed at 480 °C exhibits the lowest interfacial defect density and best device performance. Finally, 3.05% efficiency is achieved and the devices show excellent storage and light‐soaking stability. This preliminary experimental study implies that SnO₂ has potential for developing high‐efficiency, stable, and environmentally friendly Sb₂Se₃‐based solar cells.

中文翻译：

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使用水溶液喷涂SnO2作为缓冲层的Sb2Se3薄膜光伏

Sb ₂ Se ₃由于其合适的带隙，强光吸收，简单的相，无毒和富含地球的成分而成为有前途的光伏材料。当前，大多数Sb ₂ Se ₃薄膜太阳能电池都基于有毒的CdS作为缓冲层。在这里，首次引入无毒，宽带隙且化学稳定的SnO ₂代替CdS作为缓冲层，以构建上覆SnO ₂ / Sb ₂ Se ₃薄膜太阳能电池。详细研究了喷涂的SnO ₂薄膜的相态和器件的能带对准。氧化锡₂在480°C退火的缓冲层具有最低的界面缺陷密度和最佳的器件性能。最终，实现了3.05％的效率，并且该器件具有出色的存储和透光稳定性。这项初步的实验研究表明，SnO ₂具有开发高效，稳定和环保的基于Sb ₂ Se ₃的太阳能电池的潜力。