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In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.jcrysgro.2017.11.032
Daichi Dojima , Koji Ashida , Tadaaki Kaneko

Abstract For the growth of AlN single crystal with large diameter and low dislocation density on SiC substrate by physical vapor transport (PVT), a dislocation blocking buffer layer (DBBL) has been simply developed by optimizing the AlN growth parameters such as temperature gradient (ΔT), substrate temperature (T sub ), and N 2 partial pressure (P N2 ) at the initial growth stage. Increase in ΔT resulted in the formation of an abrupt AlN/SiC interface due to the suppression of inhomogeneous thermal decomposition at the interface and the subsequent AlN unstable island growth. The well-defined AlN/SiC interface played an important role in controlling the two kinds of different AlN growth mode in-situ as functions of T sub and P N2 . One is a continuous step-flow growth mode, and the other is a discontinuous platelet-like growth. The discontinuous AlN layer, consisting of thin AlN platelets and air-gaps inserted between the two adjacent platelets, acted as the DBBL. By introducing the DBBL at the initial growth stage, followed by the step-flow growth, continuous AlN layer with dislocation density of 1.7 × 10 6 cm −2 was achieved at a total growth thickness of 60 μm, which is two orders of magnitude lower than the previously reported value.

中文翻译:

升华封闭空间技术在 SiC 衬底上原位生长模式控制 AlN

摘要 为了通过物理气相传输 (PVT) 在 SiC 衬底上生长大直径低位错密度的 AlN 单晶, 通过优化温度梯度 (ΔT) 等 AlN 生长参数, 简单地开发了位错阻挡缓冲层 (DBBL)。 )、衬底温度 (T sub ) 和初始生长阶段的 N 2 分压 (P N2 )。由于抑制了界面处的不均匀热分解和随后的 AlN 不稳定岛生长,ΔT 的增加导致形成突变的 AlN/SiC 界面。明确定义的 AlN/SiC 界面在控制两种不同的 AlN 原位生长模式方面发挥了重要作用,作为 T sub 和 P N2 的函数。一种是连续阶梯流生长模式,另一种是不连续的血小板状生长。由薄的 AlN 薄片和插入两个相邻薄片之间的气隙组成的不连续 AlN 层充当 DBBL。通过在初始生长阶段引入 DBBL,然后进行阶梯流生长,以 60 μm 的总生长厚度实现了位错密度为 1.7 × 10 6 cm -2 的连续 AlN 层,比低两个数量级比之前报告的值。
更新日期:2018-02-01
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