Abstract The PV properties of wafers processed from Cz-seeded directionally solidified silicon ingots suffer from variable structural defects. In this study, we draw an overview on the types of structural defects encountered in the specific case of full 〈1 0 0〉 oriented growth. We found micro twins, background dislocations, and subgrains boundaries. We discuss the possible links between thermomechanical stresses and growth processes with spatial evolution of both background dislocation densities and subgrain boundaries length.

中文翻译：

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Cz 晶种定向凝固硅锭中结构缺陷的空间分布：蚀刻坑研究

摘要 由 Cz 晶种定向凝固硅锭加工而成的硅片的 PV 性能存在可变结构缺陷。在这项研究中，我们概述了在完全<1 0 0> 定向生长的特定情况下遇到的结构缺陷类型。我们发现了微孪晶、背景位错和亚晶界。我们讨论了热机械应力和生长过程与背景位错密度和亚晶界长度的空间演变之间的可能联系。