p‐Type and n‐type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High‐performance OTFTs are fabricated using these electrodes and printed p‐type and n‐type organic semiconductors, each achieving a mobility of 0.2 cm² V⁻¹ s⁻¹ at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse offset printing. The inverter circuits successfully operate at a supply voltage as low as 2.5 V with a high signal gain of 14. These results are expected to contribute greatly to the development of integrated circuits with high‐speed operation using OTFTs.

中文翻译：

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反向胶版印刷的有机互补逆变器电路

p型和n型有机薄膜晶体管（OTFT）以及带有精细图案化电极的互补反相器电路是通过反向胶版印刷制造的。在优化的印刷条件下，电极的通道长度小于3 µm。使用这些电极以及印刷的p型和n型有机半导体可制造高性能的OTFT，每一个都可实现0.2 cm ² V ^-1 s ^-1的迁移率。通道长度为50 µm。使用反向胶版印刷展示了由堆叠的OTFT结构制成的互补反相器电路。逆变器电路成功地在低至2.5 V的电源电压下工作，并具有14的高信号增益。这些结果有望为使用OTFT进行高速工作的集成电路的开发做出巨大贡献。