Abstract During crystal growth in heat exchanger method (HEM) system, the shape of the growth interface changes with the proceeding of the growth process, which limits the crystal size and reduces the quality of the crystal. In this paper, a modified HEM system is proposed to control the interface shape for growth of sesquioxide crystals. Numerical simulation is performed to predict heat transfer, melt flow and interface shape during growth of high melting sesquioxide crystals by the heat exchanger method. The results show that a flat or slightly convex interface shape is beneficial to reduce the solute pileup in front of the melt/crystal interface and decrease the radial temperature gradient inside the crystal during growth of sesquioxide crystals. The interface shape can be controlled by adjusting the gap size d and lower resistance heater power during growth. The growth rate and the melt/crystal interface position can be obtained by two measured temperatures.

中文翻译：

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HEM技术控制高熔点倍半氧化物晶体生长过程中的界面形状

摘要 换热器法(HEM)系统晶体生长过程中，生长界面的形状随着生长过程的进行而发生变化，限制了晶体尺寸，降低了晶体质量。在本文中，提出了一种改进的 HEM 系统来控制倍半氧化物晶体生长的界面形状。进行数值模拟以预测通过热交换器方法生长高熔点倍半氧化物晶体期间的传热、熔体流动和界面形状。结果表明，平坦或微凸的界面形状有利于减少熔体/晶体界面前的溶质堆积，降低倍半氧化物晶体生长过程中晶体内部的径向温度梯度。界面形状可以通过在生长过程中调整间隙尺寸 d 和较低电阻加热器功率来控制。生长速率和熔体/晶体界面位置可以通过两个测量温度获得。