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Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Carbon ( IF 10.9 ) Pub Date : 2018-03-01 , DOI: 10.1016/j.carbon.2017.11.061
J. Kierdaszuk , P. Kaźmierczak , R. Bożek , J. Grzonka , A. Krajewska , Z.R. Zytkiewicz , M. Sobanska , K. Klosek , A. Wołoś , M. Kamińska , A. Wysmołek , A. Drabińska

Abstract A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered.

中文翻译:

由 GaN 纳米线阵列自诱导纳米门控引起的石墨烯表面增强拉曼散射

摘要 具有沉积在其上的石墨烯的恒定高度的氮化镓 (GaN) 纳米线被证明具有强烈的拉曼散射增强,而可变高度的纳米线不能提供这种增强。扫描电子显微镜显示当 GaN 纳米线均匀时存在光滑的石墨烯表面,而观察到具有显着高度差异的纳米线上的石墨烯被最上面的纳米线刺穿和拉伸。特征拉曼带的能量转移证实了纳米线高度的这些差异对局部石墨烯应变和载流子浓度有显着影响。通过开尔文探针力显微镜获得的图像清楚地表明,石墨烯中的载流子浓度受纳米线基板的调节并取决于纳米线密度。所以,观察到的石墨烯表面增强拉曼散射沉积在相当高度的 GaN 纳米线上是由石墨烯的自诱导纳米门控触发的。然而,没有发现增强与应变或石墨烯的载流子浓度之间的明确相关性。
更新日期:2018-03-01
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