In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene–electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene–electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode–molecule interfaces.

中文翻译：

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通过化学p掺杂石墨烯电极在苯并二硫醇分子电子结中的界面工程电荷传输性质。

在这项研究中，我们制造并表征了垂直分子结，该垂直分子结由苯二硫醇（BDT）的自组装单层与p掺杂的多层石墨烯电极组成。石墨烯膜的p型掺杂是通过用三氟甲磺酸（TFMS）处理原始石墨烯（约4.40 eV的功函数）进行的，从而产生显着提高的约功函数（约5.23 eV）。据统计，由于界面工程，p掺杂的石墨烯-电极分子结比原始石墨烯-电极分子结显示出更高的电流密度和更低的电荷注入势垒高度。这种增强是由于在最高占据分子轨道介导的隧穿分子结中，经TFMS处理的p掺杂石墨烯电极的功函增加。