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Highly reliable and low-noise solid-state nanopores with an atomic layer deposited ZnO membrane on a quartz substrate
Nanoscale ( IF 6.7 ) Pub Date : 2017-11-03 00:00:00 , DOI: 10.1039/c7nr05755e
Kyeong-Beom Park 1, 2, 3, 4 , Hyung-Jun Kim 1, 2, 3, 4 , Yun-Ho Kang 1, 2, 3, 4 , Jae-Seok Yu 1, 2, 3, 4 , Hongsik Chae 1, 2, 3, 4 , Kidan Lee 1, 2, 3, 4 , Hyun-Mi Kim 1, 2, 3, 4 , Ki-Bum Kim 1, 2, 3, 4
Affiliation  

We present a fabrication scheme for a solid-state ZnO nanopore membrane directly deposited on top of a quartz substrate by atomic layer deposition (ALD) and investigate the characteristics of DNA translocation through the nanopores. We chose a ZnO membrane owing to its high isoelectric point (∼9.5) as well as its chemical and mechanical stability. Aside from the extremely low noise level exhibited by this device on a highly insulating and low dielectric quartz substrate, it also slows down the translocation speed of DNA by more than one order of magnitude as compared to that of a SiNx nanopore device. We propose that the electrostatic interaction between the positively charged ZnO nanopore wall, resulting from the high isoelectric point of ZnO, and the negatively charged phosphate backbone of DNA provides an additional frictional force that slows down the DNA translocation.

中文翻译:

高度可靠且低噪音的固态纳米孔,在石英基板上沉积有原子层沉积的ZnO膜

我们提出了一种通过原子层沉积(ALD)直接沉积在石英基板顶部的固态ZnO纳米孔膜的制备方案,并研究了通过纳米孔进行DNA易位的特征。我们选择ZnO膜是因为其高等电点(〜9.5)以及其化学和机械稳定性。除了该器件在高度绝缘和低介电的石英基板上表现出的极低噪声水平外,与SiN x相比,它还使DNA的转运速度降低了一个数量级以上。纳米孔装置。我们建议,由ZnO的高等电点引起的带正电的ZnO纳米孔壁与DNA的带负电的磷酸骨架之间的静电相互作用提供了额外的摩擦力,从而减慢了DNA的转运。
更新日期:2017-11-23
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