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Low-temperature crystallization of solution-derived metal oxide thin films assisted by chemical processes†
Chemical Society Reviews ( IF 46.2 ) Pub Date : 2017-11-22 00:00:00 , DOI: 10.1039/c6cs00917d
Iñigo Bretos 1, 2, 3 , Ricardo Jiménez 1, 2, 3 , Jesús Ricote 1, 2, 3 , M. Lourdes Calzada 1, 2, 3
Affiliation  

Over the last few years the efforts devoted to the research on low-temperature processing of metal oxide thin films have increased notably. This has enabled the direct integration of metal oxide layers (amorphous semiconductors) on low-melting-point polymeric substrates for flexible electronic systems, which adds to the economic and environmental benefits of the use of these processes with reduced energy consumption. More challenging is the preparation of crystalline complex oxide films at temperatures compatible with their direct integration in flexible devices. However, the usually high crystallization temperatures (>600 °C) impede the development of devices that take full advantage of the large variety of oxide functionalities available. This tutorial review analyzes a number of strategies based on wet chemical methods for inducing the crystallization of metal oxide thin films at low temperatures. The key mechanisms are explained in relation to the specific step of the fabrication process reached in an earlier stage: the formation of a defect-free, highly densified amorphous metal–oxygen network or the actual crystallization of the metal oxide. The role of photochemistry, where light can be used as a complementary energy source to induce crystallization, is particularly highlighted. This requires the synthesis of novel photosensitive solutions (modified metal alkoxides, charge-transfer metal complexes or structurally designed molecular compounds) and a precise control over the reactions promoted by UV irradiation (photochemical cleavage, ozonolysis, condensation or photocatalysis). Relevant examples derived from the integration of crystalline metal oxide thin films on flexible substrates (≤350 °C) illustrate the most recent achievements in this field.

中文翻译:

化学过程辅助溶液衍生的金属氧化物薄膜的低温结晶

在过去的几年中,致力于金属氧化物薄膜的低温处理研究的努力显着增加。这使得金属氧化物层(非晶半导体)可以直接集成在用于柔性电子系统的低熔点聚合物基板上,从而增加了使用这些工艺的经济和环境效益,并降低了能耗。更具挑战性的是在与其直接集成到柔性器件中兼容的温度下制备晶体复合氧化物薄膜。但是,通常较高的结晶温度(> 600°C)阻碍了充分利用多种可用氧化物功能性的器件的开发。本教程概述分析了基于湿化学方法的多种策略,这些策略可在低温下诱导金属氧化物薄膜的结晶。解释了与早期阶段的制造过程的特定步骤有关的关键机制:无缺陷,高度致密的非晶态金属-氧气网络的形成或金属氧化物的实际结晶。特别强调了光化学的作用,其中光可以用作诱导结晶的补充能源。这就需要合成新型的光敏溶液(改性的金属醇盐,电荷转移金属络合物或结构设计的分子化合物),并精确控制由紫外线照射促进的反应(光化学裂解,臭氧分解,冷凝或光催化)。从晶体金属氧化物薄膜在柔性基板上的集成(≤350°C)得出的相关例子说明了该领域的最新成就。
更新日期:2017-11-22
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