In a recent report,1 Lee et al. have proposed an “effective field model” for extrinsic doping to explain the electrical properties of Al‐doped zinc oxide (ZnO) films grown by atomic layer deposition (ALD).1 They have introduced the doping model by considering the layered structure of the ALD‐grown films as observed in the transmission electron microscopy measurements. However, in the present comment, we have demonstrated that the suggested doping model is misleading in which physically inconsistent assumptions are considered throughout. Herein, a reasonable interpretation of the electrical properties and doping mechanism of the ALD‐grown films by taking into consideration the theoretical formulations of the disordered electronic system is suggested.

中文翻译：

---

关于“原子层沉积铝掺杂ZnO薄膜的结构和电学性质”的评论

在最近的一份报告中，1 Lee等。我们提出了一种用于外在掺杂的“有效场模型”，以解释通过原子层沉积（ALD）生长的Al掺杂的氧化锌（ZnO）膜的电性能。1他们通过考虑在透射电子显微镜测量中观察到的ALD生长膜的分层结构引入了掺杂模型。但是，在本评论中，我们证明了建议的掺杂模型具有误导性，其中始终考虑物理上不一致的假设。在此，建议通过考虑无序电子系统的理论公式来合理解释ALD生长膜的电性能和掺杂机理。