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Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS2 van der Waals Heterojunctions
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2017-11-21 00:00:00 , DOI: 10.1021/acsami.7b15288
Shengxue Yang 1 , Minghui Wu 2 , Bin Wang 1 , Li-Dong Zhao 1 , Li Huang 2 , Chengbao Jiang 1 , Su-Huai Wei 3
Affiliation  

van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile electronic and optoelectronic applications. Here, we report few-layer SnSe/MoS2 van der Waals heterojunctions and study their electrical and optoelectronic characteristics. The new heterojunctions present excellent electrical transport characteristics with a distinct rectification effect and a high current on/off ratio (∼1 × 105). Such type-II heterostructures also generate a self-powered photocurrent with a fast response time (<10 ms) and exhibit high photoresponsivity of 100 A W–1, together with high external quantum efficiency of 23.3 × 103% under illumination by 532 nm light. Photoswitching characteristics of the heterojunctions can be modulated by bias voltage, light wavelength, and power density. The designed novel type-II van der Waals heterojunctions are formed from a combination of a transition-metal dichalcogenide and a group IV–VI layered 2D material, thereby expanding the library of ultrathin flexible 2D semiconducting devices.

中文翻译:

几层II型SnSe / MoS 2 van der Waals异质结的增强的电学和光电特性

通过堆叠各种二维(2D)材料形成的范德华异质结具有一系列吸引人的物理特性,从而为通用电子和光电应用提供了理想的平台。在这里,我们报告了几层SnSe / MoS 2 van der Waals异质结,并研究了它们的电学和光电学特性。新的异质结具有出色的电传输特性,具有明显的整流效果和高电流开/关比(〜1×10 5)。此类II型异质结构还产生具有快速响应时间(<10 ms)的自供电光电流,并具有100 AW –1的高光响应性,以及23.3×10 3的高外部量子效率%在532nm光照射下。可以通过偏置电压,光波长和功率密度来调制异质结的光电开关特性。设计的新型II型范德华异质结是由过渡金属二卤化物和IV-VI组分层2D材料的组合形成的,从而扩展了超薄柔性2D半导体器件的库。
更新日期:2017-11-22
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