Abstract In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

中文翻译：

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锗单晶电阻直拉生长传热、热应力和位错密度的计算分析

摘要 在本文中，对用于生长 IR 光学级 Ge 单晶的直拉装置的流体流动、温度梯度、热应力和位错密度进行了一组数值模拟，用于生长过程的不同阶段。所有计算均采用二维稳态有限元方法。得到的数值结果表明，热场、热应力和位错结构主要取决于生长系统中的晶体高度、热辐射和气体流量。