Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories, Published online: 20 November 2017; doi:10.1038/nmat5028

An in-plane memory device based on multidomain BiFeO3 thin films is reported. Highly conductive domain walls appear only during the application of a read-out field, a non-destructive process that reduces accumulation of mobile defects on the walls.

中文翻译：

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高导域壁的临时形成，用于无损读出铁电域壁电阻切换存储器

高导域壁的临时形成，用于无损读出铁电域壁电阻切换存储器

高导域壁的临时形成，用于非破坏性地读出铁电域壁电阻切换存储器，在线发布：2017年11月20日；doi：10.1038 / nmat5028

报道了一种基于多畴BiFeO 3薄膜的面内存储器件。高导电畴壁仅在施加读出场期间出现，这是一种无损过程，可减少壁上移动缺陷的积累。