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Effect of Rubidium Incorporation on the Structural, Electrical, and Photovoltaic Properties of Methylammonium Lead Iodide-Based Perovskite Solar Cells
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2017-11-20 00:00:00 , DOI: 10.1021/acsami.7b13947
Ik Jae Park 1 , Seongrok Seo 2 , Min Ah Park 1 , Sangwook Lee 3 , Dong Hoe Kim 4 , Kai Zhu 4 , Hyunjung Shin 2 , Jin Young Kim 1
Affiliation  

We report the electrical properties of rubidium-incorporated methylammonium lead iodide ((RbxMA1–x)PbI3) films and the photovoltaic performance of (RbxMA1–x)PbI3 film-based p–i–n-type perovskite solar cells (PSCs). The incorporation of a small amount of Rb+ (x = 0.05) increases both the open circuit voltage (Voc) and the short circuit photocurrent density (Jsc) of the PSCs, leading to an improved power conversion efficiency (PCE). However, a high fraction of Rb+ incorporation (x = 0.1 and 0.2) decreases the Jsc and thus the PCE, which is attributed to the phase segregation of the single tetragonal perovskite phase to a MA-rich tetragonal perovskite phase and a RbPbI3 orthorhombic phase at high Rb fractions. Conductive atomic force microscopic and admittance spectroscopic analyses reveal that the single-phase (Rb0.05MA0.95)PbI3 film has a high electrical conductivity because of a reduced deep-level trap density. We also found that Rb substitution enhances the diode characteristics of the PSC, as evidenced by the reduced reverse saturation current (J0). The optimized (RbxMA1–x)PbI3 PSCs exhibited a PCE of 18.8% with negligible hysteresis in the photocurrent–voltage curve. The results from this work enhance the understanding of the effect of Rb incorporation into organic–inorganic hybrid halide perovskites and enable the exploration of Rb-incorporated mixed perovskites for various applications, such as solar cells, photodetectors, and light-emitting diodes.

中文翻译:

corporation掺入对甲基铵碘化铅钙钛矿太阳能电池结构,电学和光伏性能的影响

我们报告了掺-甲基铵碘化铅((Rb x MA 1– x)PbI 3)薄膜的电性能以及(Rb x MA 1– x)PbI 3薄膜基于p–i–n型的光电性能钙钛矿太阳能电池(PSC)。掺入少量的Rb +x = 0.05)会同时增加PSC的开路电压(V oc)和短路光电流密度(J sc),从而提高功率转换效率(PCE)。但是,很大一部分Rb +掺入(x= 0.1和0.2)会降低J sc并因此降低PCE,这归因于单个四方钙钛矿相在高Rb分数下分离为富MA的四方钙钛矿相和RbPbI 3正交晶相。导电原子力显微镜和导纳光谱分析表明,单相(Rb 0.05 MA 0.95)PbI 3膜由于降低了深能级陷阱密度而具有高电导率。我们还发现,Rb替代增强了PSC的二极管特性,如反向饱和电流(J 0)的减小所证明。最佳化(Rb x MA 1– x)PbI 3 PSC在光电流-电压曲线中的PCE值为18.8%,具有可忽略的滞后。这项工作的结果使人们更加了解了Rb掺入有机-无机混合卤化物钙钛矿中的作用,并使得能够探索将Rb掺入的混合钙钛矿用于各种应用,例如太阳能电池,光电探测器和发光二极管。
更新日期:2017-11-21
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