An electrically injected hybrid organic/inorganic III-nitride white light-emitting diode (LED) has been fabricated by using a two-dimensional (2D) microhole array structure. The hybrid LED geometry significantly enhances proximity between the inorganic active-region and the down-converting yellow organic light-emitting polymers (OLEPs), enabling the near-field nonradiative Förster resonance energy transfer (FRET) process with high efficiency while retaining excellent electrical characteristics of an unpatterned planar LED. A reduction in the recombination lifetime in the InGaN/GaN blue active region has been observed with the hybrid device, confirming the nonradiative FRET process occurring between the InGaN/GaN blue active region and the yellow organic polymer. This results in a typical FRET efficiency of 16.7%, where the FRET interaction area accounts for approximately 0.64% of the remaining blue-emitting inorganic LED, but enhancing total device efficiency. An optimized white-light EL emission is achieved with typical CIE color coordinates at (0.29, 0.32).

中文翻译：

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具有非辐射福斯特共振能量转移的电注入杂化有机/无机III族氮化物白光发光二极管

通过使用二维（2D）微孔阵列结构，制造了电注入有机/无机III-氮化杂化白色发光二极管（LED）。混合LED的几何形状显着增强了无机活性区域与下转换的黄色有机发光聚合物（OLEP）之间的接近度，从而在保持出色的电气特性的同时，实现了高效率的近场非辐射Förster共振能量转移（FRET）工艺无图案的平面LED的数量。用混合器件观察到InGaN / GaN蓝色活性区域中的复合寿命降低，证实了在InGaN / GaN蓝色活性区域和黄色有机聚合物之间发生的非辐射FRET过程。这导致典型的FRET效率为16.7％，其中FRET相互作用区域约占剩余的发出蓝光的无机LED的0.64％，但提高了整个器件的效率。在典型的CIE颜色坐标为（0.29，0.32）的情况下实现了优化的白光EL发射。