Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt-quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiber-drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070-1330 nm) band with large full-width at half-maximum (FWHM) values (189-266 nm) and notable Stokes shift (100-210 nm) was observed, which depended on the B₂O₃ concentration. The PL lifetime was about 1.42-2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO₃] triangle units forming the two-dimensional (2D) glass network structure clearly increased with increasing B₂O₃ concentration, which could accelerate the movement of Pb²⁺ and Se²⁻ ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD-doped borosilicate glass may find potential application in ultra-wideband fiber amplifiers.

中文翻译：

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拓扑结构对PbSe量子点掺杂硼硅酸盐玻璃光致发光的影响

掺杂有PbSe量子点（QDs）的硼硅酸盐玻璃是通过常规的熔融淬火工艺和随后的热处理制备的，其表现出良好的热，化学和机械稳定性，并且易于拉丝。观察到一个宽的近红外（NIR）光致发光（PL）发射（1070-1330 nm）波段，其半峰全宽（FWHM）值（189-266 nm）大，斯托克斯位移（100-210 nm）明显。 ，这取决于B ₂ O _3的浓度。PL寿命约为1.42-2.44μs，并且随着QD尺寸的增加而明显降低。随着B ₂ O _3的增加，形成二维（2D）玻璃网络结构的平面[BO ₃ ]三角形单元明显增加浓度，可以加速Pb ²⁺和Se ^2-离子的运动并促进PbSe QDs的生长。掺PbSe QD的硼硅酸盐玻璃的可调宽带NIR PL发射可能会在超宽带光纤放大器中找到潜在的应用。