Two-dimensional materials are compatible with silicon complementary metal-oxide semiconductor processes. As such, the integration of two-dimensional materials with silicon-based semiconductors could lead to an amalgamation of the beneficial properties of both silicon and the two-dimensional material, thereby facilitating improved performance. Single-layer transition metal dichalcogenide materials such as MoS₂, MoTe₂, and WS₂ are characterized by direct band gaps and possess high emission efficiencies. These materials are, therefore, perfectly suited for ameliorating the optical emission inadequacies of silicon-based materials. In this study, we integrate WS₂ with a silicon-based silicon-nitride waveguide to modulate a 532 nm pump light source and successfully modulate and amplify an optical signal at 640 nm. Compared to other modulators based on two-dimensional materials, e.g., graphene, the proposed WS₂-based modulator theoretically incurs lower losses and exhibits higher contrast levels and signal-to-noise ratios. As the proposed modulator can compensate for losses and has potential for on-chip integration, it has excellent prospects for application in the field of on-chip optical interconnects.

中文翻译：

---

基于CMOS的WS ₂兼容全光调制器

二维材料与硅互补金属氧化物半导体工艺兼容。这样，二维材料与基于硅的半导体的集成可以导致硅和二维材料的有益特性的融合，从而促进改进的性能。单层过渡金属二硫化碳材料，例如MoS ₂，MoTe ₂和WS ₂的特征在于带隙直接，并具有高发射效率。因此，这些材料非常适合缓解硅基材料的光发射不足。在本研究中，我们集成了WS ₂用硅基氮化硅波导来调制532 nm泵浦光源，并成功地调制和放大640 nm的光信号。与基于二维材料的其他调制器（例如石墨烯）相比，提出的基于WS ₂的调制器在理论上会产生较低的损耗，并表现出较高的对比度和信噪比。由于提出的调制器可以补偿损耗并具有片上集成的潜力，因此在片上光学互连领域的应用具有极好的前景。