Transparent bipolar semiconductors (TBSCs) are in demand for transparent electronics to serve as the basis for next generation optoelectronic devices. However, the poor carrier controllability in wide-bandgap materials makes the realization of a bipolar nature difficult. Only two materials, CuInO₂ and SnO, have been reported as TBSCs. To satisfy demand for the coexistence of transparency and bipolarity, we propose a design concept with three strategies; choice of early transition metals (eTM) such as Y³⁺ and Zr⁴⁺ for improving controllability of carrier doping, design of chemical bonds to obtain an appropriate band structure for bipolar doping, and use of a forbidden band-edge transition to retain transparency. This approach is verified through a practical examination of a candidate material, tetragonal ZrOS, which is chosen by following the criteria. ZrOS exhibits an excellent controllability of the electrical conductivity (10^–7–10^–2 S cm^–1), p- or n-type nature with ∼10^–2 S cm^–1 by Y or F doping, respectively, and optically wide gap (below 10^–4 cm^–1 up to ∼2.5 eV). This concept provides a new kind of TBSC based on eTM ionic compounds.

中文翻译：

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透明双极半导体的化学设计和实例

透明双极半导体（TBSC）要求透明电子器件作为下一代光电器件的基础。然而，宽带隙材料中较差的载流子可控性使得实现双极性质变得困难。据报道只有两种材料CuInO ₂和SnO作为TBSC。为了满足对透明性和双极性共存的需求，我们提出了一种具有三种策略的设计概念：选择早期过渡金属（eTM），例如Y ³⁺和Zr ⁴⁺为了改善载流子掺杂的可控制性，设计化学键以获得用于双极掺杂的合适的能带结构，并使用禁带边缘跃迁来保持透明性。通过对候选材料四方ZrOS进行实际检查来验证此方法，该材料是根据标准选择的。ZrOS表现出极好的电导率可控性（10 ^–7 –10 ^–2 S cm ^–1），p型或n型性质，分别通过Y或F掺杂达到〜10 ^–2 S cm ^–1，并且光学上较宽间隙（低于10 ^–4厘米^–1高达约2.5 eV）。该概念提供了一种基于eTM离子化合物的新型TBSC。