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Ultrafast Generation of Unconventional{001}Loops in Si
Physical Review Letters ( IF 8.6 ) Pub Date : 2017-11-17 00:00:00 , DOI: 10.1103/physrevlett.119.205503
Luis A. Marqués , María Aboy , Iván Santos , Pedro López , Fuccio Cristiano , Antonino La Magna , Karim Huet , Toshiyuki Tabata , Lourdes Pelaz

Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquidlike droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond time scale.

中文翻译:

Si中非常规{001}环的超快生成

离子注入硅的超快激光退火导致热力学上出乎意料的大 {001}自填隙循环,以及描述自填隙团簇生长的Ostwald成熟模型失败。我们已经进行了分子动力学模拟与重点实验的结合,以证明在接近熔点的温度下,自填隙富Si被驱动为致密的液状液滴,这些液滴在固态Si基体中具有很高的移动性。这些液滴通过聚结机制生长,最终转变为{001} 在纳秒级的时间范围内从液态到固态的相变循环。
更新日期:2017-11-17
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