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Industrial application of atom probe tomography to semiconductor devices
Scripta Materialia ( IF 6 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.scriptamat.2017.09.004
Alexander Devin Giddings , Sebastian Koelling , Yasuo Shimizu , Robert Estivill , Koji Inoue , Wilfried Vandervorst , Wai Kong Yeoh

Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these challenges. However, the semiconductor industry has demanding requirements against which the techniques in use are evaluated. This article explores the use of APT in the semiconductor industry, showing the potential of the technique, the obstacles that occur in practise, and possible future developments.

中文翻译:

原子探针层析成像在半导体器件中的工业应用

先进的半导体器件由于其特征尺寸小、成分多样和结构复杂而面临着计量挑战。原子探针断层扫描 (APT) 是一种新兴技术,可提供原子尺度的 3D 成分分析;因此,它似乎特别适合应对这些挑战。然而,半导体行业对评估所使用的技术有着苛刻的要求。本文探讨了 APT 在半导体行业中的应用,展示了该技术的潜力、实践中遇到的障碍以及未来可能的发展。
更新日期:2018-04-01
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