Abstract The high intrinsic carrier mobility of graphene has drawn much attention. However, the high contact resistance between the graphene and metal electrode limits the application of high-speed graphene-based transistors. In this work, we combined both electrical characterization and Raman spectroscopy to study the contact resistance issue in graphene field effect transistor (FET). As FET size scaling down, the graphene-metal contact resistance is found to be a significant contributor to the total resistance. The signature of the graphene/metal bonding with various metal electrodes is probed by using high-resolution Raman spectroscopy. Graphene-metal Raman signals vary on different metal electrodes. This study unearths the properties of the graphene/metal bonding, and paves a way for the investigations into improving the stability and scalability of the graphene-based transistor for future high-speed nanoelectronics.

中文翻译：

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通过拉曼光谱探测石墨烯-金属接触的特性

摘要 石墨烯的高本征载流子迁移率引起了广泛关注。然而，石墨烯与金属电极之间的高接触电阻限制了高速石墨烯基晶体管的应用。在这项工作中，我们结合电学表征和拉曼光谱来研究石墨烯场效应晶体管 (FET) 中的接触电阻问题。随着 FET 尺寸的缩小，发现石墨烯-金属接触电阻是总电阻的重要贡献者。通过使用高分辨率拉曼光谱探测石墨烯/金属与各种金属电极的结合特征。石墨烯-金属拉曼信号在不同金属电极上有所不同。这项研究揭示了石墨烯/金属键合的特性，