Abstract We investigate the types and origins of structural defects in thin ( 4 cm -2 ), localized areas with a defect density > 10 5 cm -2 are observed. Cross-sectional and systematic plan-view defect etching and microscopy reveals that the majority of stacking faults and dislocations originate at the interface between the porous silicon layer and the epitaxial wafer. Localised dislocation clusters are observed in regions of collapsed/deformed porous silicon and at decorated stacking faults. In localized regions of high extended defect density, increased minority-carrier recombination activity is observed. Evidence for impurity segregation to the extended defects (internal gettering), which is known to exacerbate carrier recombination is demonstrated. The impact of the defects on material performance and substrate re-use is also discussed.

中文翻译：

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用于太阳能电池的高质量无切缝外延硅的表征：缺陷来源和对少数载流子寿命的影响

摘要 我们研究了薄 (4 cm -2 ) 中结构缺陷的类型和起源，观察到缺陷密度 > 10 5 cm -2 的局部区域。横截面和系统平面图缺陷蚀刻和显微镜显示，大多数堆垛层错和位错起源于多孔硅层和外延晶片之间的界面。在塌陷/变形的多孔硅区域和装饰的堆垛层错处观察到局部位错簇。在高扩展缺陷密度的局部区域，观察到少数载流子复合活动增加。证明了杂质分离到扩展缺陷（内部吸杂）的证据，已知这会加剧载流子重组。还讨论了缺陷对材料性能和基材再利用的影响。