The fabrication of a highly ordered array of single-crystalline nanostructures prepared from solution-phase or vapor-phase synthesis methods is extremely challenging due to multiple difficulties of spatial arrangement and control of crystallographic orientation. Herein, we introduce a nanotransplantation printing (NTPP) technique for the reliable fabrication, transfer, and arrangement of single-crystalline Si nanowires (NWs) on diverse substrates. NTPP entails (1) formation of nanoscale etch mask patterns on conventional low-cost Si via nanotransfer printing, (2) two-step combinatorial plasma etching for defining Si NWs, and (3) detachment and transfer of the NWs onto various receiver substrates using an infiltration-type polymeric transfer medium and a solvent-assisted adhesion switching mechanism. Using this approach, high-quality, highly ordered Si NWs can be formed on almost any type of surface including flexible plastic substrates, biological surfaces, and deep-trench structures. Moreover, NTPP provides controllability of the crystallographic orientation of NWs, which is confirmed by the successful generation of (100)- and (110)-oriented Si NWs with different properties. The outstanding electrical properties of the NWs were confirmed by fabricating and characterizing Schottky junction field-effect transistors. Furthermore, exploiting the highly flexible nature of the NWs, a high-performance piezoresistive strain sensor, with a high gauge factor over 200 was realized.

中文翻译：

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晶体取向控制的单晶纳米线阵列在不同表面上的纳米移植印刷。

由于空间布置和晶体学取向控制的多重困难，由溶液相或气相合成方法制备的高度有序的单晶纳米结构阵列的制造极具挑战性。在这里，我们介绍了一种纳米移植印刷（NTPP）技术，用于在各种基板上可靠地制造，转移和布置单晶硅纳米线（NW）。NTPP需要（1）在常规的低成本Si通道上形成纳米级蚀刻掩模图案纳米转移印刷，（2）两步组合等离子体刻蚀，用于定义Si NWs，以及（3）使用渗透型聚合物转移介质和溶剂辅助的粘合转换机制将NWs分离和转移到各种接收器基板上。使用这种方法，可以在几乎任何类型的表面上形成高质量，高度有序的Si NW，包括柔性塑料基板，生物表面和深沟槽结构。此外，NTPP提供了NWs晶体取向的可控性，这已通过成功生成具有不同性能的（100）和（110）取向的Si NWs得以证实。通过制造和表征肖特基结场效应晶体管，可以确定NW的出色电性能。此外，利用NW的高度灵活性，