UV emitting scintillating screens based on single crystalline films (SCFs) of Lu₃Al_5−xGa_xO₁₂:Pr garnet have been developed by the liquid phase epitaxy (LPE) growth method onto Y₃Al₅O₁₂ (YAG) substrates using a lead-free BaO based flux. The absorbance, luminescence and scintillation properties of these SCFs have been investigated depending on the Ga content in the x = 0–1.9 range. We have found that the absorption and luminescence spectra of Pr³⁺ ions as well as the scintillation light yield (LY) and decay kinetics of Lu₃Al_5−xGa_xO₁₂ SCFs are non-linearly affected by the gallium concentration x in the mentioned solid solution due to preference for the distribution of Ga³⁺ and Al³⁺ ions between the tetrahedral and octahedral positions of the garnet host, respectively. The best scintillation properties of Lu₃Al_5−xGa_xO₁₂:Pr SCFs are achieved at the Ga content in the x = 1.0–1.2 range. The LY of the Lu₃Ga_1.2Al_3.8O₁₂:Pr SCF is comparable with the LY of the best reference LuAG:Pr single crystal counterpart and significantly (up to 3 times) overcomes the LY of LuAG:Pr and Lu₃Al_4–3.5Ga_1.0–1.5O₁₂ SCFs, grown onto the YAG substrates from the conventional PbO–B₂O₃ flux.

中文翻译：

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基于Lu ₃ Al _{5− x} Ga _x O ₁₂石榴石的Pr ³⁺掺杂固溶体的单晶膜闪烁体的外延生长

基于Lu ₃ Al _{5− x} Ga _x O ₁₂：Pr石榴石的单晶膜（SCF）的紫外发光闪烁屏已通过液相外延（LPE）生长方法开发到Y ₃ Al ₅ O ₁₂（YAG）基板上使用无铅BaO基焊剂。已经研究了这些SCF的吸收，发光和闪烁特性，具体取决于x = 0–1.9范围内的Ga含量。我们发现Pr ³⁺离子的吸收和发光光谱以及Lu ₃ Al _{5− x} Ga的闪烁光产率（LY）和衰减动力学由于优选在石榴石主体的四面体和八面体位置之间分别分布Ga ³⁺和Al ³⁺离子，因此_x O ₁₂ SCF受到上述固溶体中镓浓度x的非线性影响。Lu ₃ Al _{5− x} Ga _x O ₁₂：Pr SCF的最佳闪烁特性是在x= 1.0-1.2范围内的Ga含量下实现的。Lu ₃ Ga _1.2 Al _3.8 O ₁₂的LY：Pr SCF可与最佳参考LuAG：Pr单晶对应物的LY相媲美，并且显着（最多3倍）克服了LuAG：Pr和Lu ₃ Al _4–3.5 Ga _1.0–1.5 O ₁₂ SCF的LY。YAG基板是由传统的PbO–B ₂ O ₃助熔剂制成的。