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16% efficient silicon/organic heterojunction solar cells using narrow band-gap conjugated polyelectrolytes based low resistance electron-selective contacts
Nano Energy ( IF 17.6 ) Pub Date : 2017-11-11 , DOI: 10.1016/j.nanoen.2017.11.025
Jian He , Wenjun Zhang , Jichun Ye , Pingqi Gao

Dopant-free silicon (Si)/organic heterojunction solar cells (HSCs) have drawn much attention due to their immense potential in achieving high power conversion efficiencies (PCEs) with simple device architectures and fabrication procedures. However, unsatisfied rear-contacts severely hinder further improvement in PCEs for these promising HSCs. Exploring effective cathodic interfacial materials with low temperature fabrication to replace conventional diffusion layer shows the extremely importance of technical innovation. Here, poly[4,8-bis(2-ethylhexyloxyl)benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl-alt-ethylhexyl-3-fluorothieno[3,4-b]thiophene-2-carboxylate-4,6-diyl] (PTB7)-based narrow band-gap conjugated polyelectrolytes, PTB7-NBr and PTB7-NSO3, are firstly employed as effective cathodic interfacial materials in Si/organic HSCs to improve the passivation and electron transporting property at n-Si/Al interface. The low-temperature proceeded electron-selective contact of n-Si/PTB7-NBr/Al gives a contact resistivity as low as 6.7 ± 0.8 mΩ cm2, upon it a remarkable PCE of 16.0% is finally obtained from a completely dopant-free Si/organic HSC. The understanding of conjugated polyelectrolytes on interfacial modification may lead a path to fabricate high performance Si/organic heterojunction devices with efficient charge transfer process at a simplified fabrication process.



中文翻译:

使用基于窄带隙共轭聚电解质的低电阻电子选择性触点,效率为16%的硅/有机异质结太阳能电池

由于无掺杂硅(Si)/有机异质结太阳能电池(HSC)具有巨大的潜力,可通过简单的器件架构和制造程序来实现高功率转换效率(PCE),因此备受关注。然而,不满意的后触点严重阻碍了这些有前途的HSC的PCE的进一步改进。用低温制造方法探索有效的阴极界面材料来代替传统的扩散层显示了技术创新的极端重要性。这里,聚[4,8-双(2- ethylhexyloxyl)苯并[1,2-B:4,5-B']二噻吩-2,6-二基ALT乙基己基-3-氟- [3,4-B [噻吩-2-羧酸-4,6-二基](PTB7)基窄带隙共轭聚电解质PTB7-NBr和PTB7-NSO 3首次被用作Si /有机HSC中有效的阴极界面材料,以改善n -Si / Al界面处的钝化和电子传输性能。的低温进行电子选择性接触Ñ -Si / PTB7-NBR /铝给出了接触电阻率可低至6.7±0.8毫欧厘米2,在其上的16.0%的显着PCE最后从一个完全的掺杂剂-自由获得Si /有机HSC。对界面改性上的共轭聚电解质的理解可能会导致一条途径,以简化的制造工艺制造具有高效电荷转移工艺的高性能Si /有机异质结器件。

更新日期:2017-11-11
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