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Effect of Ti doping on spin injection and relaxation in few-layer graphene
Carbon ( IF 10.9 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.carbon.2017.11.026
Bing Zhao , Xiaoguang Xu , Le Wang , Juan Li , Ziyu Zhang , Pengfei Liu , Qi Liu , Zhicheng Wang , Yong Jiang

Abstract We demonstrate the spin filtering effect in Co|MgO|TiOx|graphene junctions and a large negative spin polarization in graphene at room temperature. By systematically introducing Ti (TiOx) clusters to the exfoliated few-layer graphene, we confirm that the Ti (TiOx) clusters will increase the charged impurity scattering and lead to a decreased momentum scattering time and an abnormal Gaussian broadening effect. However, the spin relaxation mechanism is not significantly affected, indicating that the spin relaxation mechanism of graphene will not be affected by the atomic-scale Ti (TiOx) clusters induced charged impurity scattering.

中文翻译:

Ti掺杂对少层石墨烯自旋注入和弛豫的影响

摘要 我们证明了 Co|MgO|TiOx| 石墨烯结中的自旋过滤效应和石墨烯在室温下的大负自旋极化。通过系统地将 Ti (TiOx) 簇引入剥离的几层石墨烯,我们证实 Ti (TiOx) 簇会增加带电杂质散射并导致动量散射时间减少和异常高斯展宽效应。然而,自旋弛豫机制没有受到显着影响,表明石墨烯的自旋弛豫机制不会受到原子级 Ti(TiOx)簇诱导的带电杂质散射的影响。
更新日期:2018-02-01
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