The defect structures of photocatalytic improved Degussa P25 powder were evaluated by X-ray photoelectron spectroscopy (XPS), paramagnetic resonance spectroscopy (EPR) and in situ studies of the electrical resistivity in order to understand the charge carrier transport inside the material. Annealing the titanium dioxide in vacuum at temperatures below the phase transition temperature did not increase the oxygen defect concentration drastically. However, annealing Degussa P25 powder in vacuum resulted in a redistribution of Ti³⁺-lattice states and lattice oxygen vacancies. The diffusion of these lattice oxygen vacancies from the bulk to the surface of the material forms charge carrier trapping sites. Such transformation of the defect structure of TiO₂ leads to switching from an insulating state to a conducting state.

通过X射线光电子能谱（XPS），顺磁共振能谱（EPR）和电阻率的原位研究评估了光催化改进的Degussa P25粉末的缺陷结构，以便了解电荷在材料内部的传输。在低于相变温度的温度下在真空中对二氧化钛进行退火不会显着增加氧缺陷浓度。但是，在真空中对Degussa P25粉末进行退火会导致Ti ³⁺晶格态和晶格氧空位的重新分布。这些晶格氧空位从块体到材料表面的扩散形成了电荷载流子俘获位点。TiO ₂缺陷结构的这种转变 导致从绝缘状态切换到导电状态。